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Transistor: N-MOSFET | unipolar | 30V | 2.1A | Idm: 10A | 0.5W | SOT323

EB Kods: EB1808089075

Ražotāja preces kods: 
DMN3067LW-7

Ražotājs, zīmols: 
DIODES INCORPORATED

 0,52 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage30V
Drain current2.1A
Pulsed drain current10A
Power dissipation0.5W
CaseSOT323
Gate-source voltage±12V
On-state resistance67mΩ
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate