Tulkot latviski
Transistor: N-MOSFET | unipolar | 30V | 2.1A | Idm: 10A | 0.5W | SOT323
Transistor: N-MOSFET | unipolar | 30V | 2.1A | Idm: 10A | 0.5W | SOT323
EB Kood: EB1808089075
Tootja kauba kood: DMN3067LW-7
Tootja kauba kood:
DMN3067LW-7
Tootja, kaubamärk: DIODES INCORPORATED
Tootja, kaubamärk:
DIODES INCORPORATED
0,52 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 2.1A |
Pulsed drain current | 10A |
Power dissipation | 0.5W |
Case | SOT323 |
Gate-source voltage | ±12V |
On-state resistance | 67mΩ |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |