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Transistor: N-MOSFET | unipolar | 100V | 3A | Idm: 121A | 1.2W | SOT23

EB Kods: EB1712493579

Ražotāja preces kods: 
YJL03G10A

Ražotājs, zīmols: 
YANGJIE TECHNOLOGY

 0,0935 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current3A
Pulsed drain current121A
Power dissipation1.2W
CaseSOT23
Gate-source voltage±20V
On-state resistance0.14Ω
MountingSMD
Gate charge4.3nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced