Tulkot latviski

Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 24.5A | Idm: 70A

EB Kods: EB309134958

Ražotāja preces kods: 
SIRA18ADP-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,43 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage30V
Drain current24.5A
Pulsed drain current70A
Power dissipation9.4W
CasePowerPAK® SO8
Gate-source voltage-16...20V
On-state resistance13.5mΩ
MountingSMD
Gate charge21.5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced