Tulkot latviski

Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 1.7A | Idm: 6.7A

EB Kods: EB128453787

Ražotāja preces kods: 
SQ1470AEH-T1_GE3

Ražotājs, zīmols: 
VISHAY

 0,75 € 
Bez PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage30V
Drain current1.7A
Pulsed drain current6.7A
Power dissipation3.3W
CaseSC70
CaseSOT363
Gate-source voltage±12V
On-state resistance0.115Ω
MountingSMD
Gate charge5.2nC
Kind of packagereel
Kind of packagetape
Kind of channelenhancement