Tulkot latviski

Transistor: N-MOSFET | Trench | unipolar | 60V | 0.215A | Idm: 1.2A

EB Kods: EB1809815093

Ražotāja preces kods: 
2N7002BKW,115

Ražotājs, zīmols: 
NEXPERIA

0,16 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyTrench
Polarisationunipolar
Drain-source voltage60V
Drain current0.215A
Pulsed drain current1.2A
Power dissipation0.33W
CaseSC70
CaseSOT323
Gate-source voltage±20V
On-state resistance
MountingSMD
Gate charge0.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate