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Transistor: N-MOSFET | Trench | unipolar | 20V | 0.8A | Idm: 4A | 350mW

EB Kods: EB743744791

Ražotāja preces kods: 
PMZB290UNE2YL

Ražotājs, zīmols: 
NEXPERIA

 0,45 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyTrench
Polarisationunipolar
Drain-source voltage20V
Drain current0.8A
Pulsed drain current4A
Power dissipation0.35W
CaseDFN1006B-3
CaseSOT883B
Gate-source voltage±8V
On-state resistance1.19Ω
MountingSMD
Gate charge1.4nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced