Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4A | Idm: 8A | 54W | TO263-7
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4A | Idm: 8A | 54W | TO263-7
EB Kods: EB838508912
Ražotāja preces kods: G2R1000MT17J
Ražotāja preces kods:
G2R1000MT17J
Ražotājs, zīmols: GeneSiC SEMICONDUCTOR
Ražotājs, zīmols:
GeneSiC SEMICONDUCTOR
9,74 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | G2R™ |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.7kV |
| Drain current | 4A |
| Pulsed drain current | 8A |
| Power dissipation | 54W |
| Case | TO263-7 |
| Gate-source voltage | -5...20V |
| On-state resistance | 1Ω |
| Mounting | SMD |
| Kind of package | tube |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |