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Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4A | Idm: 8A | 54W | TO263-7

Code: EB838508912

Manufacturer's product code: 
G2R1000MT17J

Manufacturer, Brand: 
GeneSiC SEMICONDUCTOR

9,22 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment. 
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Product Properties

Type of transistorN-MOSFET
TechnologyG2R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current4A
Pulsed drain current8A
Power dissipation54W
CaseTO263-7
Gate-source voltage-5...20V
On-state resistance1Ω
MountingSMD
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal