Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 8A | Idm: 16A | 75W

EB Kods: EB1341122664

Ražotāja preces kods: 
G3R350MT12J

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

 8,28 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current8A
Pulsed drain current16A
Power dissipation75W
CaseTO263-7
Gate-source voltage-5...15V
On-state resistance0.35Ω
MountingSMD
Gate charge12nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal