Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 8A | Idm: 16A | 75W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 8A | Idm: 16A | 75W
EB Kood: EB1341122664
Tootja kauba kood: G3R350MT12J
Tootja kauba kood:
G3R350MT12J
Tootja, kaubamärk: GeneSiC SEMICONDUCTOR
Tootja, kaubamärk:
GeneSiC SEMICONDUCTOR
8,28 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | G3R™ |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 8A |
Pulsed drain current | 16A |
Power dissipation | 75W |
Case | TO263-7 |
Gate-source voltage | -5...15V |
On-state resistance | 0.35Ω |
Mounting | SMD |
Gate charge | 12nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |