Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 8A | Idm: 16A | 75W

EB Kood: EB1341122664

Tootja kauba kood: 
G3R350MT12J

Tootja, kaubamärk: 
GeneSiC SEMICONDUCTOR

7,81 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
Küsimus?
-+

Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current8A
Pulsed drain current16A
Power dissipation75W
CaseTO263-7
Gate-source voltage-5...15V
On-state resistance0.35Ω
MountingSMD
Gate charge12nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal