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Transistor: N-MOSFET | CoolMOS™ G7 | unipolar | 600V | 20A | Idm: 54A

EB Kods: EB1507165921

Ražotāja preces kods: 
IPDD60R125G7XTMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

 6,83 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyCoolMOS™ G7
Polarisationunipolar
Drain-source voltage600V
Drain current20A
Pulsed drain current54A
Power dissipation120W
CasePG-HDSOP-10-1
Gate-source voltage±20V
On-state resistance0.125Ω
MountingSMD
Gate charge27nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced