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Transistor: N-JFET | CoolGaN™ | unipolar | 600V | 12.5A | Idm: 23A | 55.5W

EB Kods: EB1508355391

Ražotāja preces kods: 
IGT60R190D1SATMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

16,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 7 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-JFET
TechnologyCoolGaN™
Polarisationunipolar
Kind of transistorHEMT
Drain-source voltage600V
Drain current12.5A
Pulsed drain current23A
Power dissipation55.5W
CasePG-HSOF-8-3
Gate-source voltage-10V
On-state resistance0.19Ω
MountingSMD
Gate charge3.2nC
Kind of packagetape
Kind of channelenhanced
Gate current7.7mA