Tulkot latviski
Transistor: N-JFET | CoolGaN™ | unipolar | 600V | 12.5A | Idm: 23A | 55.5W
Transistor: N-JFET | CoolGaN™ | unipolar | 600V | 12.5A | Idm: 23A | 55.5W
EB Kood: EB1508355391
Tootja kauba kood: IGT60R190D1SATMA1
Tootja kauba kood:
IGT60R190D1SATMA1
Tootja, kaubamärk: INFINEON TECHNOLOGIES
Tootja, kaubamärk:
INFINEON TECHNOLOGIES
16,50 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos 7 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-JFET |
| Technology | CoolGaN™ |
| Polarisation | unipolar |
| Kind of transistor | HEMT |
| Drain-source voltage | 600V |
| Drain current | 12.5A |
| Pulsed drain current | 23A |
| Power dissipation | 55.5W |
| Case | PG-HSOF-8-3 |
| Gate-source voltage | -10V |
| On-state resistance | 0.19Ω |
| Mounting | SMD |
| Gate charge | 3.2nC |
| Kind of package | tape |
| Kind of channel | enhanced |
| Gate current | 7.7mA |