• Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 1
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 2
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 3
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 4
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 5
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 6
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 7
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 8
Tulkot latviski

Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

EB Kods: EB1120354738

Ražotāja preces kods: 
MZ-V9P2T0BW

Ražotājs, zīmols: 
SAMSUNG

 252,63 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 3-5 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Features

TRIM supportYes
Memory typeV-NAND MLC
Component forPC
Read speed7450 MB/s
PCI Express interface data lanesx4
NVMe version2.0
NVMeYes
S.M.A.R.T. supportYes
SSD form factorM.2
Protection featuresHeat resistant
Mean time between failures (MTBF)1500000 h
InterfacePCI Express 4.0
Random read (4KB)1400000 IOPS
Write speed6900 MB/s
Security algorithms256-bit AES
SSD capacity2 TB
Hardware encryptionYes
Random write (4KB)1550000 IOPS
DevSlp (device sleep) supportYes

Power

Power consumption (average)5.5 W
Operating voltage3.3 V
Power consumption (idle)0.055 W

Operational conditions

Operating shock1500 G
Maximum operating temperature70 °C
Operating temperature (T-T)0 - 70 °C

Weight & dimensions

Width80 mm
Depth2.3 mm
Weight9 g
Height22 mm

Packaging data

Package typeBox