• Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 1
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 2
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 3
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 4
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 5
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 6
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 7
  • Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC фото 8
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Samsung 990 PRO 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

EB Код: EB1120354738

Код товара производителя: 
MZ-V9P2T0BW

Производитель, бренд: 
SAMSUNG

 252,63 € 
НДС включен / gb
Ha складе поставщика >10 шт.
⛟ Доставка через 3-5 рабочих дня после оплаты. 
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Features

TRIM supportYes
Memory typeV-NAND MLC
Component forPC
Read speed7450 MB/s
PCI Express interface data lanesx4
NVMe version2.0
NVMeYes
S.M.A.R.T. supportYes
SSD form factorM.2
Protection featuresHeat resistant
Mean time between failures (MTBF)1500000 h
InterfacePCI Express 4.0
Random read (4KB)1400000 IOPS
Write speed6900 MB/s
Security algorithms256-bit AES
SSD capacity2 TB
Hardware encryptionYes
Random write (4KB)1550000 IOPS
DevSlp (device sleep) supportYes

Power

Power consumption (average)5.5 W
Operating voltage3.3 V
Power consumption (idle)0.055 W

Operational conditions

Operating shock1500 G
Maximum operating temperature70 °C
Operating temperature (T-T)0 - 70 °C

Weight & dimensions

Width80 mm
Depth2.3 mm
Weight9 g
Height22 mm

Packaging data

Package typeBox