Tulkot latviski

Transistor: N/P-MOSFET x2 | unipolar | 100/-100V | 0.9/-0.7A | 0.87W

EB Kods: EB1710358281

Ražotāja preces kods: 
ZXMHC10A07N8TC

Ražotājs, zīmols: 
DIODES INCORPORATED

1,70 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN/P-MOSFET x2
Polarisationunipolar
Drain-source voltage100/-100V
Drain current0.9/-0.7A
Power dissipation0.87W
CaseSO8
Gate-source voltage±20V
On-state resistance0.9/1.45Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesMOSFET H-Bridge