Tulkot latviski
Transistor: N/P-MOSFET x2 | unipolar | 100/-100V | 0.9/-0.7A | 0.87W
Transistor: N/P-MOSFET x2 | unipolar | 100/-100V | 0.9/-0.7A | 0.87W
EB Kods: EB1710358281
Ražotāja preces kods: ZXMHC10A07N8TC
Ražotāja preces kods:
ZXMHC10A07N8TC
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
1,70 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N/P-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 100/-100V |
Drain current | 0.9/-0.7A |
Power dissipation | 0.87W |
Case | SO8 |
Gate-source voltage | ±20V |
On-state resistance | 0.9/1.45Ω |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | MOSFET H-Bridge |