Tulkot latviski

Transistor: N-MOSFET x2 | unipolar | 25V | 500mA | Idm: 1.3A | 0.3W

EB Kods: EB1730253545

Ražotāja preces kods: 
FDG6303N

Ražotājs, zīmols: 
ONSEMI

 0,53 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET x2
TechnologyDMOS
Polarisationunipolar
Drain-source voltage25V
Drain current0.5A
Pulsed drain current1.3A
Power dissipation0.3W
CaseSC70-6
CaseSC88
CaseSOT363
On-state resistance770mΩ
MountingSMD
Gate charge2.3nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level