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Transistor: N-MOSFET x2 | unipolar | 24V | 11A | Idm: 60A | 1.4W | ECH8

EB Kods: EB934177190

Ražotāja preces kods: 
ECH8695R-TL-W

Ražotājs, zīmols: 
ONSEMI

 0,82 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage24V
Drain current11A
Pulsed drain current60A
Power dissipation1.4W
CaseECH8
Gate-source voltage±12.5V
On-state resistance9.1mΩ
MountingSMD
Gate charge10nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Semiconductor structurecommon drain
Features of semiconductor devicesESD protected gate
Applicationcharging control