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Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 30V | 610mA | Idm: 2A

EB Kods: EB834840286

Ražotāja preces kods: 
SI1036X-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,53 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET x2
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage30V
Drain current610mA
Pulsed drain current2A
Power dissipation0.22W
CaseSC89
CaseSOT563
Gate-source voltage±8V
On-state resistance1.1Ω
MountingSMD
Gate charge2nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced