Tulkot latviski

Transistor: N-MOSFET x2 | Trench | unipolar | 60V | 0.24A | Idm: 1.2A

EB Kods: EB812390211

Ražotāja preces kods: 
2N7002BKV,115

Ražotājs, zīmols: 
NEXPERIA

 0,66  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET x2
TechnologyTrench
Polarisationunipolar
Drain-source voltage60V
Drain current0.24A
Pulsed drain current1.2A
Power dissipation0.525W
CaseSOT666
Gate-source voltage±20V
On-state resistance
MountingSMD
Gate charge0.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate