Tulkot latviski
Transistor: N-MOSFET x2 | Trench | unipolar | 60V | 0.24A | Idm: 1.2A
Transistor: N-MOSFET x2 | Trench | unipolar | 60V | 0.24A | Idm: 1.2A
EB Kood: EB812390211
Tootja kauba kood: 2N7002BKV,115
Tootja kauba kood:
2N7002BKV,115
Tootja, kaubamärk: NEXPERIA
Tootja, kaubamärk:
NEXPERIA
0,45 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET x2 |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.24A |
Pulsed drain current | 1.2A |
Power dissipation | 0.525W |
Case | SOT666 |
Gate-source voltage | ±20V |
On-state resistance | 2Ω |
Mounting | SMD |
Gate charge | 0.6nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |