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IC: driver | IGBT half-bridge,MOSFET half-bridge | SO8 | -2.2÷1.4A
IC: driver | IGBT half-bridge,MOSFET half-bridge | SO8 | -2.2÷1.4A
EB Kods: EB1871761281
Ražotāja preces kods: NCP5181DR2G
Ražotāja preces kods:
NCP5181DR2G
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
2,84 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of integrated circuit | driver |
| Topology | IGBT half-bridge |
| Topology | MOSFET half-bridge |
| Kind of integrated circuit | gate driver |
| Kind of integrated circuit | high-/low-side |
| Case | SO8 |
| Output current | -2.2...1.4A |
| Number of channels | 2 |
| Supply voltage | 10...20V DC |
| Mounting | SMD |
| Operating temperature | -40...125°C |
| Impulse rise time | 60ns |
| Pulse fall time | 40ns |
| Kind of package | reel |
| Kind of package | tape |
| Voltage class | 600V |
| Protection | undervoltage UVP |