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IC: driver | IGBT half-bridge,MOSFET half-bridge | SO8 | -2.2÷1.4A
IC: driver | IGBT half-bridge,MOSFET half-bridge | SO8 | -2.2÷1.4A
Code: EB1871761281
Manufacturer's product code: NCP5181DR2G
Manufacturer's product code:
NCP5181DR2G
Manufacturer, Brand: ONSEMI
Manufacturer, Brand:
ONSEMI
2,84 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of integrated circuit | driver |
Topology | IGBT half-bridge |
Topology | MOSFET half-bridge |
Kind of integrated circuit | gate driver |
Kind of integrated circuit | high-/low-side |
Case | SO8 |
Output current | -2.2...1.4A |
Number of channels | 2 |
Supply voltage | 10...20V DC |
Mounting | SMD |
Operating temperature | -40...125°C |
Impulse rise time | 60ns |
Pulse fall time | 40ns |
Kind of package | reel |
Kind of package | tape |
Voltage class | 600V |
Protection | undervoltage UVP |