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Diode: Schottky rectifying | SiC | THT | 1.2kV | 20A | TO247-2 | Ir: 40uA

EB Kods: EB1055141079

Ražotāja preces kods: 
B2D20120H1

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

 8,17  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Type of diodeSchottky rectifying
TechnologySiC
MountingTHT
Max. off-state voltage1.2kV
Load current20A
Semiconductor structuresingle diode
CaseTO247-2
Max. forward voltage1.78V
Max. forward impulse current190A
Leakage current40µA
Power dissipation159W
Kind of packagetube