Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W

EB Kood: EB924465377

Tootja kauba kood: 
B1M080120HK

Tootja, kaubamärk: 
BASiC SEMICONDUCTOR

 24,54  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current27A
Pulsed drain current80A
Power dissipation241W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance80mΩ
MountingTHT
Gate charge149nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal