Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 82A | 231W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 82A | 231W
EB Kood: EB623341892
Tootja kauba kood: S2M0080120D
Tootja kauba kood:
S2M0080120D
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
20,77 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 29A |
| Pulsed drain current | 82A |
| Power dissipation | 231W |
| Case | TO247-3 |
| Gate-source voltage | -10...25V |
| On-state resistance | 137mΩ |
| Mounting | THT |
| Gate charge | 54nC |
| Kind of package | tube |
| Kind of channel | enhanced |