Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 130W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 130W
EB Kood: EB638476015
Tootja kauba kood: S2M0160120K
Tootja kauba kood:
S2M0160120K
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
3,56 €
Hind ilma käibemaksuta / gb
Saadaval tarnija laos >10 tk
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Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 12A |
Pulsed drain current | 40A |
Power dissipation | 130W |
Case | TO247-4 |
Gate-source voltage | -5...20V |
On-state resistance | 0.3Ω |
Mounting | THT |
Gate charge | 26.5nC |
Kind of package | tube |
Kind of channel | enhancement |
Features of semiconductor devices | Kelvin terminal |