Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 130W

EB Kood: EB638476015

Tootja kauba kood: 
S2M0160120K

Tootja, kaubamärk: 
SMC DIODE SOLUTIONS

 3,56  
Hind ilma käibemaksuta / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current12A
Pulsed drain current40A
Power dissipation130W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance0.3Ω
MountingTHT
Gate charge26.5nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal