Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 15A | Idm: 66A | 156W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 15A | Idm: 66A | 156W
EB Kood: EB385299500
Tootja kauba kood: S2M0120120K
Tootja kauba kood:
S2M0120120K
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
4,00 €
Hind ilma käibemaksuta / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 15A |
| Pulsed drain current | 66A |
| Power dissipation | 156W |
| Case | TO247-4 |
| Gate-source voltage | -5...20V |
| On-state resistance | 212mΩ |
| Mounting | THT |
| Gate charge | 29.6nC |
| Kind of package | tube |
| Kind of channel | enhancement |
| Features of semiconductor devices | Kelvin terminal |