Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 160A | 313W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 160A | 313W
EB Kood: EB991862851
Tootja kauba kood: NSF040120L3A0Q
Tootja kauba kood:
NSF040120L3A0Q
Tootja, kaubamärk: NEXPERIA
Tootja, kaubamärk:
NEXPERIA
29,30 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 46A |
| Pulsed drain current | 160A |
| Power dissipation | 313W |
| Case | TO247-3 |
| Gate-source voltage | -10...22V |
| On-state resistance | 60mΩ |
| Mounting | THT |
| Gate charge | 95nC |
| Kind of package | tube |
| Kind of channel | enhanced |