Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 34A | 270W | HIP247™
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 34A | 270W | HIP247™
EB Kood: EB70361494
Tootja kauba kood: SCT30N120
Tootja kauba kood:
SCT30N120
Tootja, kaubamärk: STMicroelectronics
Tootja, kaubamärk:
STMicroelectronics
32,38 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | SiC |
Technology | SiCFET |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 34A |
Pulsed drain current | 90A |
Power dissipation | 270W |
Case | HIP247™ |
Gate-source voltage | -10...25V |
On-state resistance | 0.1Ω |
Mounting | THT |
Gate charge | 105nC |
Kind of package | tube |