Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 16A | Idm: 40A | 123W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 16A | Idm: 40A | 123W
EB Kood: EB2039212209
Tootja kauba kood: G3R160MT12D
Tootja kauba kood:
G3R160MT12D
Tootja, kaubamärk: GeneSiC SEMICONDUCTOR
Tootja, kaubamärk:
GeneSiC SEMICONDUCTOR
12,71 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | G3R™ |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 16A |
| Pulsed drain current | 40A |
| Power dissipation | 123W |
| Case | TO247-3 |
| Gate-source voltage | -5...15V |
| On-state resistance | 0.16Ω |
| Mounting | THT |
| Gate charge | 28nC |
| Kind of package | tube |
| Kind of channel | enhanced |