Tulkot latviski

Transistor: N-MOSFET | Polar™ | unipolar | 1.2kV | 2.4A | Idm: 6A | 125W

EB Kood: EB1187976334

Tootja kauba kood: 
IXTP2R4N120P

Tootja, kaubamärk: 
IXYS

 7,78 € 
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Saadaval tarnija laos >10 tk
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Product Properties

Type of transistorN-MOSFET
TechnologyPolar™
Polarisationunipolar
Drain-source voltage1.2kV
Drain current2.4A
Pulsed drain current6A
Power dissipation125W
CaseTO220AB
Gate-source voltage±30V
On-state resistance7.5Ω
MountingTHT
Gate charge37nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesstandard power mosfet
Reverse recovery time920ns