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Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -3A | Idm: -12A

Code: EB1259317772

Manufacturer's product code: 
SI2319DS-T1-GE3

Manufacturer, Brand: 
VISHAY

 1,04 € 
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-40V
Drain current-3A
Pulsed drain current-12A
Power dissipation1.25W
CaseSOT23
Gate-source voltage±20V
On-state resistance0.13Ω
MountingSMD
Gate charge17nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced