Tulkot latviski
Transistor: IGBT | SiC SBD | 650V | 75A | 405W | TO247-4
Transistor: IGBT | SiC SBD | 650V | 75A | 405W | TO247-4
EB Kods: EB1242234325
Ražotāja preces kods: BGH75N65ZF1
Ražotāja preces kods:
BGH75N65ZF1
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
18,40 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Technology | Field Stop |
Technology | SiC SBD |
Technology | Trench |
Collector-emitter voltage | 650V |
Collector current | 75A |
Power dissipation | 405W |
Case | TO247-4 |
Gate-emitter voltage | ±20V |
Pulsed collector current | 300A |
Mounting | THT |
Gate charge | 444nC |
Kind of package | tube |
Turn-on time | 84ns |
Turn-off time | 565ns |
Features of semiconductor devices | integrated anti-parallel diode |