Tulkot latviski

Transistor: IGBT | SiC SBD | 650V | 75A | 405W | TO247-4

EB Kods: EB1242234325

Ražotāja preces kods: 
BGH75N65ZF1

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

 18,40  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
TechnologyField Stop
TechnologySiC SBD
TechnologyTrench
Collector-emitter voltage650V
Collector current75A
Power dissipation405W
CaseTO247-4
Gate-emitter voltage±20V
Pulsed collector current300A
MountingTHT
Gate charge444nC
Kind of packagetube
Turn-on time84ns
Turn-off time565ns
Features of semiconductor devicesintegrated anti-parallel diode