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Transistor: N-MOSFET | unipolar | 900V | 5.8A | Idm: 36.8A | 200W | TO247

EB Kods: EB979326597

Ražotāja preces kods: 
STW11NK90Z

Ražotājs, zīmols: 
STMicroelectronics

 4,94 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySuperMesh™
Polarisationunipolar
Drain-source voltage900V
Drain current5.8A
Pulsed drain current36.8A
Power dissipation200W
CaseTO247
Gate-source voltage±30V
On-state resistance980mΩ
MountingTHT
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesESD protected gate