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Transistor: N-MOSFET | Polar™ | unipolar | 900V | 10.5A | Idm: 36A | 200W

EB Kods: EB1886195465

Ražotāja preces kods: 
IXFR18N90P

Ražotājs, zīmols: 
IXYS

 21,89  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Type of transistorN-MOSFET
TechnologyHiPerFET™
TechnologyPolar™
Polarisationunipolar
Drain-source voltage900V
Drain current10.5A
Pulsed drain current36A
Power dissipation200W
CaseISOPLUS247™
Gate-source voltage±30V
On-state resistance0.66Ω
MountingTHT
Gate charge97nC
Kind of packagetube
Kind of channelenhanced
Reverse recovery time300ns