Tulkot latviski

Module: IGBT | diode/transistor | IGBT half-bridge | Urmax: 1.2kV

EB Kods: EB1151335509

Ražotāja preces kods: 
IXA20PG1200DHGLB

Ražotājs, zīmols: 
IXYS

 16,81  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of moduleIGBT
Semiconductor structurediode/transistor
TopologyIGBT half-bridge
Max. off-state voltage1.2kV
Collector current23A
CaseSMPD-B
Electrical mountingSMT
Gate-emitter voltage±20V
Pulsed collector current45A
Power dissipation130W
TechnologyISOPLUS™
TechnologySonic FRD™