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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 11A | Idm: 40A | 122W

EB Kods: EB1806655535

Ražotāja preces kods: 
S2M0160120J

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 4,64 € 
Bez PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current11A
Pulsed drain current40A
Power dissipation122W
CaseD2PAK-7
Gate-source voltage-5...20V
On-state resistance0.3Ω
MountingSMD
Gate charge26.5nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal