Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 11A | Idm: 40A | 122W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 11A | Idm: 40A | 122W
EB Kood: EB1806655535
Tootja kauba kood: S2M0160120J
Tootja kauba kood:
S2M0160120J
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
5,62 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 11A |
Pulsed drain current | 40A |
Power dissipation | 122W |
Case | D2PAK-7 |
Gate-source voltage | -5...20V |
On-state resistance | 0.3Ω |
Mounting | SMD |
Gate charge | 26.5nC |
Kind of package | tube |
Kind of channel | enhancement |
Features of semiconductor devices | Kelvin terminal |