Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 11A | Idm: 40A | 122W

EB Kood: EB1806655535

Tootja kauba kood: 
S2M0160120J

Tootja, kaubamärk: 
SMC DIODE SOLUTIONS

 5,62  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current11A
Pulsed drain current40A
Power dissipation122W
CaseD2PAK-7
Gate-source voltage-5...20V
On-state resistance0.3Ω
MountingSMD
Gate charge26.5nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal