Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 650V | 26A | Idm: 100A | 175W
Transistor: N-MOSFET | SiC | unipolar | 650V | 26A | Idm: 100A | 175W
EB Kods: EB494530415
Ražotāja preces kods: DIW065SIC080
Ražotāja preces kods:
DIW065SIC080
Ražotājs, zīmols: DIOTEC SEMICONDUCTOR
Ražotājs, zīmols:
DIOTEC SEMICONDUCTOR
10,73 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 650V |
| Drain current | 26A |
| Pulsed drain current | 100A |
| Power dissipation | 175W |
| Case | TO247-3 |
| Gate-source voltage | -5...18V |
| On-state resistance | 75mΩ |
| Mounting | THT |
| Gate charge | 75nC |
| Kind of package | tube |
| Kind of channel | enhancement |