Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 650V | 26A | Idm: 100A | 175W

EB Kods: EB494530415

Ražotāja preces kods: 
DIW065SIC080

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 10,73  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage650V
Drain current26A
Pulsed drain current100A
Power dissipation175W
CaseTO247-3
Gate-source voltage-5...18V
On-state resistance75mΩ
MountingTHT
Gate charge75nC
Kind of packagetube
Kind of channelenhancement