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Transistor: P-MOSFET | unipolar | -60V | -4A | Idm: -16A | 3.1W | SOT223

EB Kods: EB1107996719

Ražotāja preces kods: 
PJW4P06A_R2_00001

Ražotājs, zīmols: 
PanJit Semiconductor

 0,60 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-60V
Drain current-4A
Pulsed drain current-16A
Power dissipation3.1W
CaseSOT223
Gate-source voltage±20V
On-state resistance0.13Ω
MountingSMD
Gate charge10nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced