Tulkot latviski
Module | single transistor | 850V | 110A | SOT227B | Ugs: ±40V | screw
Module | single transistor | 850V | 110A | SOT227B | Ugs: ±40V | screw
EB Kods: EB1336091125
Ražotāja preces kods: IXFN110N85X
Ražotāja preces kods:
IXFN110N85X
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
108,45 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 9 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | MOSFET transistor |
Semiconductor structure | single transistor |
Drain-source voltage | 850V |
Drain current | 110A |
Case | SOT227B |
Electrical mounting | screw |
Polarisation | unipolar |
On-state resistance | 33mΩ |
Pulsed drain current | 220A |
Power dissipation | 1170W |
Technology | HiPerFET™ |
Technology | X-Class |
Kind of channel | enhanced |
Gate charge | 425nC |
Reverse recovery time | 205ns |
Gate-source voltage | ±40V |
Mechanical mounting | screw |