Tulkot latviski
Module | single transistor | 800V | 53A | SOT227B | Ugs: ±30V | screw
Module | single transistor | 800V | 53A | SOT227B | Ugs: ±30V | screw
EB Kods: EB403313307
Ražotāja preces kods: IXFN60N80P
Ražotāja preces kods:
IXFN60N80P
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
61,13 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | MOSFET transistor |
Semiconductor structure | single transistor |
Drain-source voltage | 800V |
Drain current | 53A |
Case | SOT227B |
Electrical mounting | screw |
Polarisation | unipolar |
On-state resistance | 0.14Ω |
Pulsed drain current | 150A |
Power dissipation | 1.04kW |
Technology | HiPerFET™ |
Technology | Polar™ |
Kind of channel | enhanced |
Gate charge | 250nC |
Reverse recovery time | 250ns |
Gate-source voltage | ±30V |
Mechanical mounting | screw |