Tulkot latviski
Module | single transistor | 300V | 192A | SOT227B | screw | Idm: 550A
Module | single transistor | 300V | 192A | SOT227B | screw | Idm: 550A
EB Kods: EB114500369
Ražotāja preces kods: IXFN210N30P3
Ražotāja preces kods:
IXFN210N30P3
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
56,39 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 1 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | MOSFET transistor |
Semiconductor structure | single transistor |
Drain-source voltage | 300V |
Drain current | 192A |
Case | SOT227B |
Electrical mounting | screw |
Polarisation | unipolar |
On-state resistance | 14.5mΩ |
Pulsed drain current | 550A |
Power dissipation | 1.5kW |
Technology | HiPerFET™ |
Technology | Polar3™ |
Kind of channel | enhanced |
Gate charge | 268nC |
Reverse recovery time | 250ns |
Gate-source voltage | ±30V |
Mechanical mounting | screw |