Tulkot latviski
Module | single transistor | 1kV | 23A | SOT227B | Ugs: ±40V | screw | 595W
Module | single transistor | 1kV | 23A | SOT227B | Ugs: ±40V | screw | 595W
EB Kods: EB1654334371
Ražotāja preces kods: IXFN26N100P
Ražotāja preces kods:
IXFN26N100P
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
72,42 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 6 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | MOSFET transistor |
Semiconductor structure | single transistor |
Drain-source voltage | 1kV |
Drain current | 23A |
Case | SOT227B |
Electrical mounting | screw |
Polarisation | unipolar |
On-state resistance | 390mΩ |
Pulsed drain current | 65A |
Power dissipation | 595W |
Technology | HiPerFET™ |
Technology | Polar™ |
Kind of channel | enhanced |
Gate charge | 197nC |
Reverse recovery time | 300ns |
Gate-source voltage | ±40V |
Mechanical mounting | screw |