Tulkot latviski

Transistor: IGBT | SiC SBD | 1.2kV | 75A | 568W | TO247-3

EB Kods: EB1919641385

Ražotāja preces kods: 
BGH75N120HF1

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

 17,72 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
TechnologyField Stop
TechnologySiC SBD
TechnologyTrench
Collector-emitter voltage1.2kV
Collector current75A
Power dissipation568W
CaseTO247-3
Gate-emitter voltage±20V
Pulsed collector current200A
MountingTHT
Gate charge398nC
Kind of packagetube
Turn-on time140ns
Turn-off time443ns
Features of semiconductor devicesintegrated anti-parallel diode