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Transistor: IGBT | SiC SBD | 1.2kV | 75A | 568W | TO247-3
Transistor: IGBT | SiC SBD | 1.2kV | 75A | 568W | TO247-3
EB Kods: EB1919641385
Ražotāja preces kods: BGH75N120HF1
Ražotāja preces kods:
BGH75N120HF1
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
16,38 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 3 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | IGBT |
| Technology | Field Stop |
| Technology | SiC SBD |
| Technology | Trench |
| Collector-emitter voltage | 1.2kV |
| Collector current | 75A |
| Power dissipation | 568W |
| Case | TO247-3 |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 200A |
| Mounting | THT |
| Gate charge | 398nC |
| Kind of package | tube |
| Turn-on time | 140ns |
| Turn-off time | 443ns |
| Features of semiconductor devices | integrated anti-parallel diode |