Tulkot latviski
Transistor: IGBT | PT | 1.2kV | 46A | 543W | T-Max
Transistor: IGBT | PT | 1.2kV | 46A | 543W | T-Max
EB Kods: EB1821695809
Ražotāja preces kods: APT35GP120B2DQ2G
Ražotāja preces kods:
APT35GP120B2DQ2G
Ražotājs, zīmols: MICROCHIP TECHNOLOGY
Ražotājs, zīmols:
MICROCHIP TECHNOLOGY
87,68 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | IGBT |
| Technology | POWER MOS 7® |
| Technology | PT |
| Collector-emitter voltage | 1.2kV |
| Collector current | 46A |
| Power dissipation | 543W |
| Case | T-Max |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 140A |
| Mounting | THT |
| Gate charge | 150nC |
| Kind of package | tube |
| Turn-on time | 36ns |
| Turn-off time | 0.22µs |
| Features of semiconductor devices | integrated anti-parallel diode |